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STC4606
The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology
产品介绍
FEATURE
N-Channel
l 30V/6.9A, RDS(ON) = 30mΩ（Typ）
@VGS = 10V
l 30V/6.0A, RDS(ON) = 46mΩ
@VGS = 4.5V
P-Channel
l -30V/-6.0A, RDS(ON) = 51mΩ（Typ）
@VGS = -10V
l -30V/-5.0A, RDS(ON)= 70mΩ
@VGS = - 4.5V
l Super high density cell design for
extremely low RDS(ON)
l Exceptional on-resistance and maximum
DC current capability
l SOP-8 package
/upload/20180905173693049304.pdf
