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ST2301A
ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology
产品介绍
-20V/-2.8A, RDS(ON) = 80mΩ (Typ.) @VGS = -4.5V
-20V/-2.0A, RDS(ON) = 120mΩ @VGS = -2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
SOT-23 package design
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