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ST3422A
ST3422A是采用高密度, DMOS沟槽技术生产的N沟道逻辑增强型功率场效应晶体管。 The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
60V/6.0A, RDS(ON) = 28mΩ (Typ.) @VGS = 10V
60V/2.5A, RDS(ON) = 38mΩ @VGS = 4.5V
60V/1.5A, RDS(ON) = 100mΩ @VGS = 2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
SOT-23-3L package design